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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) at (IC=0.5A). High Switching Speed Typically. Q A C KTC3631D/L TRIPLE DIFFUSED NPN TRANSISTOR I J Complementary to KTA1862D. Wide Safe Operating Area (SOA) H F 1 2 F 3 K E M : tf 0.4 S at IC=1A. P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.20 2.00 + _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B D 1. BASE MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC RATING 400 400 7 2.0 4.0 1.0 10 150 -55 150 UNIT V V V A 2. COLLECTOR 3. EMITTER DPAK A C I J D O PC Tj Tstg W H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ + 0.2 2.0 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Saturation Voltage Base Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT Cob ton tstg tf 180 IB1 IPAK TEST CONDITION VCB=400V, IE=0 VEB=5.0V, IC=0 VCE=5.0V, IC=100mA VCE=5.0V, IC=500mA IC=500mA, IB=100mA IC=500mA, IB=100mA VCE=10V, IE=-100mA, f=5MHz VCB=10V, IE=0, f=1MHz OUTPUT 20sec INPUT IB2 DUTY CYCLE < 1% = IB1=-I B2 =0.2A I B1 I B2 150 MIN. 56 6 - TYP. 100 0.3 18 30 0.2 1.8 0.4 MAX. 1.0 1.0 180 0.5 1.2 - UNIT A A V V MHz pF S VCC =150V Note : hFE(1) Classification O:56 120 , Y:82 2003. 3. 27 Revision No : 4 1/3 KTC3631D/L I C - V CE 1.0 COLLECTOR CURRENT I C (A) 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 0 10 I 1.0 COLLECTOR CURRENT I C (A) 40mA 20mA C - V BE Ta=25 C VCE =5.0V mA 80m A A 60m 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0 0.2 0.4 0.6 0.8 1.0 10mA 5.0mA I B =2.0mA 1.2 1.4 1.6 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C 1k 300 DC CURRENT h FE 100 30 10 3.0 1.0 0.002 Ta=25 C VCE =5V VCE(sat) , V BE(sat) - I C 10 SATURATION VOLTAGE VCE(sat) ,V BE(sat) (V) 3.0 1.0 0.3 0.1 0.03 0.01 0.002 ) (sat Ta=25 C VBE(sat) I C /I B =5 IC ) (sat /I B =10 IC /I B =5 V CE V CE 0.01 0.03 0.1 0.3 1.0 2.0 0.01 0.03 0.1 0.3 1.0 2.0 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) SWITCHING CHARACTERISTIC 10 SWITCHING TIME (s) 5.0 3.0 t stg tf REVERSE BIAS SAFE OPERATING AREA 2.5 COLLECTOR CURRENT I C (A) L=10mH I C /I B =5 V CB =150V I B1 =-I B2 2.0 1.5 1.0 0.5 0 VCEX(SUS) VCEO(SUS) 1.0 0.5 0.3 0.1 0.1 0.3 0.5 1 3 5 COLLECTOR CURRENT I C (A) 0 100 200 300 400 500 COLLECTOR EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 4 2/3 KTC3631D/L Pc - Ta COLLECTOR DISSIPATION Pc (W) 12 2 Ta=25 C SAFE OPERATING AREA 10 1 Tc=25 C I C MAX(PULSE) * I C MAX(DC) 10 * mS S * 0m 10 8 6 4 2 0 0 50 100 150 200 2 COLLECTOR CURRENT I C (A) 10 1 3 1 D C 0.3 0.1 0.03 0.01 1 O PE RA * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE = Tc TI 25 O N C AMBIENT TEMPERATURE Ta ( C) 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 4 3/3 |
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